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| (IPD) MIP3E3SMY MOS * 2.80.2 1.50.2 Unit : mm (MIP2ExD * * 50% ) 10.50.5 9.50.2 8.00.2 6.70.3 4.50.2 1.40.1 15.40.3 * 3.70.2 1.40.1 13.50.5 4.20.3 Solder Dip (9.3) 2.50.2 0.6+0.1 -0.2 VD VC ID IDP IC Tch Tstg 700 8 1.1 1.7 0.1 150 -55 +150 V V A A A C C 0.80.1 2.540.3 5.080.5 123 1 : Control 2 : Source 3 : Drain TO-220-A1 Package : MIP3E3SMY Control Drain S R Q Q Max. duty clock MOSFET S R Q Q Source 2.80.2 : 2003 8 SLB00054AJD 1 MIP3E3SMY TC = 25C 3C fOSC MAXDC PWM * VC = VC(CNT) - 0.2 V, VD = 5 V VC = VC(CNT) - 0.2 V, VD = 5 V VC = VC(CNT) VC < VC(ON) , VD = 5 V VC > VC(CNT) , VD = 5 V VC = VC(CNT) - 0.2 V, VD = 5 V VD = 5 V VD = 5 V VD = 5 V IC = 1 mA, VD = 5 V 90 45.0 100 47.5 11 110 50.0 kHz % dB GPWM IC(SB)1 IC(SB)2 IC(OP) VC(ON) VC(OFF) / VC VC(CLP) TSW / TTIM fTIM IC(CHG) VC(CNT) * 0.2 0.2 0.20 5.4 4.1 0.8 5.7 0.4 0.5 0.55 6.1 4.8 1.3 6.2 4 3 0.7 0.8 1.00 6.7 5.4 1.8 6.7 mA mA mA V V V V % Hz VC = 0 V, VD = 40 V VC = 5 V, VD = 40 V VD = 5 V VD = 5 V -3.6 -2.0 5.4 -2.5 -1.0 5.8 10 -1.0 - 0.4 6.3 mA V mV V VC(CNT) VD(MIN) ILIMIT 36 0.9 220 50 130 2.2 ID = 0.2 A VDS = 650 V, VC = 6.5 V ID = 1 mA, VC = 6.5 V VC = VC(CNT) - 0.2 V, VD = 5 V VC = VC(CNT) - 0.2 V, VD = 5 V 700 1.0 300 100 140 3.3 1.1 380 150 A ns ns C * * * * ton(BLK) td(OCL) TOTP VC reset RDS(on) IDSS VDSS tr tf * * 4.2 V A V 6.0 10 7.5 250 250 50 3.0 70 ns ns C/W C/W Rth(ch-c) Rth(ch-a) ) *: 2 SLB00054AJD (1) (2) (3) (4) ( ) - ( ) (5) (6) (7) ) (8) ( IPD (1) (2) Power Integrations () IPD (3) IPD (4) () (1), (2) (3) MIP805 IPD IPD ( ) IPD MIP5**, MIP7** IPD MIP13* MIP14* MIP15* MIP16* MIP17* MIP18* MIP01** MIP02** MIP2*** MIP3*** MIP9*** ( 50% ) ( ( ( ) ) ) IPD DC/DC IPD MIP10* MIP814/815/816 MIP11* MIP811/812 MIP803/804/806 MIP82* MIP5** MIP7** MIP805 ( 50% ) EL IPD IPD / IPD IPD EL ( ) MIP10*, MIP11*, MIP803/804/805, MIP811/812, MIP814 816, MIP82* Power Integrations 105-8586 ( ) TEL (03) 3459-9270 |
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